S. Tian; S.-H. Yang; S. Morris; K. Parab; A.F. Tasch; D. Kamenitsa; R. Reece; B. Freer; R.B. Simonton; C. Magee (1996). The effect of dose rate on ion implanted impurity profiles in silicon. , 112(1-4), 144–147.
doi:10.1016/0168-583x(95)01280-x
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