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E.V. Kalinina; G.F. Kholujanov; A.S. Zubrilov; D.V. Tsvetkov; M.P. Vatnik; V.A. Soloviev; V.D. Tretjakov; H. Kong; V.A. Dmitriev (1997).
Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions. , 46(1-3), 259–262.
doi:10.1016/s0921-5107(96)01988-5
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