Liu, Shaoyu; Cheng, Xinhong; Zheng, Li; Sledziewski, Tomasz; Erlbacher, Tobias; Sheng, Lingyan; Yu, Yuehui (2020). Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET. Solid-State Electronics, 171(), 107873–.
doi:10.1016/j.sse.2020.107873
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